Non-volatile Bipolar Transistor Memory
In the past few years, due to the limitations of silicon-based materials, the miniaturization of devices has gradually slowed down, even reaching its limit. Finding new breakthroughs for the miniaturization of memory is an important direction for development of the electronics industry. Among many types of memories, ambipolar floating gate memory is a non-volatile memory with excellent performance. It realizes the large storage window at low programming/erasing voltage by ambipolar carrier storage, which is of great significance for low power operation. This chapter reviews the basic principles of ambipolar floating gate memory for data storage, and summarizes the application of novel micro–nano functional materials, such as nanoparticles, quantum dots, polymers, and binary materials, to the channel layer and storage layer, which play an important role in storage. The effects of material properties, device structure, and other possible factors on device performance are discussed. The consistent efforts of researchers have developed novel ambipolar floating gate storages with non-volatile, high-density storage, high switching speed, and multilevel memory. This is a good choice for the next generation of low-cost, wearable miniaturization, high-density non-volatile memory.