Tunable Chemical Solution Deposition of Y₃Fe₅O₁₂ Films for High-Performance Magnon Valve Devices

Abstract

We report magnon valve effect in YIG/Au/YIG trilayers, where bottom and top Y₃Fe₅O₁₂ (YIG) films are fabricated using a facile chemical solution deposition method. Spin Hall magnetoresistance and longitudinal spin Seebeck effect in YIG/Pt bilayers confirm that chemically processed YIG films support efficient spin-charge conversion at the heavy-metal interface, with interfacial spin mixing conductance extracted as G_r^(↑↓) ≈ 3.5×1014 Ω-1 m⁻². In the full trilayer device, distinct coercivities are engineered between the bottom and top YIG layers by adjusting the volume of organic solvent in the precursor solution, enabling stable antiparallel magnetization alignment. The spin Seebeck voltage measured across the YIG/Au/YIG/Pt heterostructure exhibits clear modulation with the relative magnetization configuration, yielding a magnon valve ratio of 52% at room temperature. This demonstrates that chemically processed YIG films can sustain coherent interlayer magnon transmission and support functional magnonic switching. The results establish chemical solution deposition as a scalable, low-cost route to magnon valve devices, extending the materials platform for magnon spintronics beyond physical vapor deposition-based epitaxy.