High-performance self-powered β-Ga2O3 asymmetric Schottky barrier deep-ultraviolet photodiode

Abstract

Self-powered deep-ultraviolet (DUV) photodetectors are highly desirable for low-power and easily integrated optoelectronic applications. In this work, we design Al/p-type β-Ga2O3/Ti/Au photodiodes incorporating asymmetric Schottky barriers (ASB) to realize self-powered DUV detection with a built-in potential (Vbi) of 0.950 V. The opposing built-in electric fields generated by the ASB configuration effectively suppress the dark current to 9.4×10^-13 A. Under illumination, the Vbi remains effective to provide the driving force required for self-powered operation. Meanwhile, the reduced depletion width at the metal–semiconductor interfaces further enhance photocarrier transport and collection. Benefiting from these effects, the devices operate in a self-powered mode, exhibiting a responsivity of 42.87 mA/W, and a detectivity of 2.1×10^12 Jones, with rise and decay time of 40 and 240 ms, respectively. These results demonstrate that ASB provide an effective strategy for developing high-performance self-powered DUV photodetectors.