Wide-Spectrum Self-Powered Photoelectric Detection Based on The Type-II Heterostructure of MnPSe3/MoS2

Abstract

The call for green economy has accelerated the research development of energy-saving optoelectronic devices. The choice of photoelectric material and the design of device configuration are crucial for achieving high device performances. In this study, we investigated the photoelectric response behaviors of van der Waals (vdW) heterostructure photodetectors by employing a type-II MnPSe 3 /MoS 2 heterojunction for charge carrier transport. Two types of device architectures were designed, one has a vertically stacked heterostructure with the photogenerated carriers transferring in an out-of-plane direction in the overlapped area of both materials; the other utilized the photogating effect using the top MoS 2 as the photogate for the carrier distribution modulation and MnPSe 3 at the bottom as the carrier transport channel. Both PDs demonstrated a broadband photoelectric response in the range of 254-1020 nm under the biased condition. Besides, the former device demonstrated a distinct self-powered behavior with the spectral detection range spanning from 365 nm to 635 nm, which was ascribed to higher charge carrier separation efficiency by the built-in electric field of the MnPSe 3 /MoS 2 heterojunction and the asymmetric barrier heights between two metal-semiconductor interfaces. This study reveals the possibility for harnessing the MnPSe 3 /MoS 2 hybrid vdW in low-power consuming optoelectronic devices and its application potential in broadband photoelectric detection.