Toward Controllable CVD Synthesis of Graphene on Copper Substrate: Roles of Oxygen Species

Abstract

The oxygen and oxygen-containing species-assisted chemical vapor deposition (CVD) has emerged as a promising method for controllable growth of graphene on copper foil. However, existing reports are limited to individual CVD stages and lack in-depth analysis. This review systematically highlights the roles of oxygen and oxygen-containing species in the entire CVD growth of graphene on copper foil. First of all, the sources and compositions of oxygen-containing species and copper oxides are unraveled. Following the sequence of CVD process, the complicated chemical interaction between O, C, H and Cu elements involved in the CVD system is emphasized to thoroughly collate the influence of oxygen-containing species on surface cleaning, surface morphology, and crystallographic characteristics of Cu foil prior to growth. Subsequently, we comprehend their functions in the decomposition and diffusion of carbon precursors, as well as alterations in nucleation mechanisms. Finally, considering the catalyzing and templating roles of copper oxides or hetero-structured copper oxides/copper surfaces, we analyze the kinetics growth control over morphology, layer number, lattice orientation, twist angle, flatness, and defect healing of graphene, governing the electronic structure and intrinsic properties of graphene. This review contributes to mechanistic understanding on oxygen-assisted CVD for advancing the controllable synthesis strategies.