Enhancing charge separation efficiency in photocatalytic hydrogen evolution via synergistic strategy based on point/interface dual defect engineering in Schottky heterojunctions

Abstract

Photocatalytic hydrogen evolution efficacy hinges on charge separation efficiency; dualdefect engineering markedly enhances material capabilities in this domain. This study presents an innovatively designed dual-defect heterojunction photocatalyst. It is composed of two key components: twinned Mn 0.5 Cd 0.5 S (T-MCS) rich in face defects, and NiCo 2 O 4 enriched with oxygen vacancy point defects. Experimental results demonstrate that this dual-defect heterojunction catalyst exhibits outstanding photocatalytic hydrogen evolution performance, yielding 1888 μmol of hydrogen within a 5h reaction time. This represents 6.74 times and 2.28 times the hydrogen production of standalone WZ-MCS (280 μmol) and WZ-MCS/NiCo 2 O 4 (828 μmol), respectively. Achieving 16.44% apparent quantum yield during monochromatic irradiation at 420 nm wavelength. Density functional theory calculations and XPS analysis suggest a Schottky junction formed at the T-MCS/Ov-NiCo 2 O 4 interface, attributed to the metallic-like behavior of NiCo 2 O 4.Photoelectrochemical testing revealed that the dual-defect synergistic engineering strategy significantly enhanced the carrier concentration and built-in electric field strength of the catalyst. This substantially increased the charge separation efficiency from an initial value of 0.02% to 20.12%, thereby markedly attenuating the recombination of photogenerated electron-hole pairs. This study demonstrates a novel pathway for fabricating photocatalytic materials with superior performance through synergistic dual-defect regulation.

Supplementary files

Article information

Article type
Paper
Submitted
29 Jan 2026
Accepted
25 Mar 2026
First published
25 Mar 2026

Nanoscale, 2026, Accepted Manuscript

Enhancing charge separation efficiency in photocatalytic hydrogen evolution via synergistic strategy based on point/interface dual defect engineering in Schottky heterojunctions

X. Lyu, M. Li, J. Nie, C. Ding, A. Ping, Z. Li, M. Ding and Z. Jin, Nanoscale, 2026, Accepted Manuscript , DOI: 10.1039/D6NR00404K

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