Photoferroelectric Coupling and Polarization-Controlled Interfacial Band Modulation in van der Waals Compound CuInP₂S₆

Abstract

Understanding how optical excitation couples with polarization and interfacial electrostatics in van der Waals (vdW) ferroelectrics (FEs) is essential for the development of light-programmable nanoelectronic and optoelectronic devices. Here, we present a direct nanoscale evidence of photoferroionic coupling in the vdW FE semiconductor CuInP₂S₆ (CIPS), where optical excitation jointly modulates electronic band bending, FE switching, and Cu⁺ ionic relaxation. The use of correlated Kelvin probe force microscopy, piezoresponse force microscopy, and conductive atomic force microscopy under above-bandgap illumination, reveals illumination-induced enhancement of surface work function, persistent surface photovoltage, reduced coercive field, and positive imprint shifts. These effects arise from synergistic photocarrier redistribution and slow Cu⁺ migration that reshape interfacial depletion widths and internal electric fields. Illumination-assisted barrier lowering further enhances carrier injection and produces sweep-rate–dependent ferroionic transport hysteresis. Our results establish photoferroionic coupling as the governing mechanism for light-controlled band modulation and polarization stability in CIPS, providing a nanoscale framework for designing light-addressable FE memories, optoelectronic switches, and neuromorphic devices based on layered ferroionic materials.