Polypyridinophane Thin Films via CVD process for Polymeric Dielectric Layer on Oxide TFT with Ultrahigh Dielectric Constant

Abstract

High-k polymer gate dielectrics are desirable for oxide thin-film transistors but limited by low capacitance and interfacial instability. Here, pyridinophane-based polymers with main-chain heteroatoms are processed via a Gorham-type chemical vapor polymerization to form ultrathin, pinhole-free dielectrics with enhanced dielectric properties and reliable oxide transistor performance.