Radiation-Hard Organic Electronics with Fullerene-Based Semiconductors

Abstract

We demonstrate an exceptional radiation hardness of thin films of pristine fullerene C60 and its organic derivative phenyl-C61-butyric acid methyl ester (PC61BM) in lateral resistor and field-effect transistor device geometries under exposure to ultra-high doses of 60Co gamma rays approaching 7.9 MGy (790 MRad). The obtained results feature a great promise of organic semiconductors for development of radiation-hard electronics for outer space exploration and other extreme environments.