Enhancing the potential of Cs 0.1 MA 0.9 PbI 3 perovskite layer through the suspension of pure and vanadium-doped metal sulphides for solar cells

Abstract

Though perovskites remain a vital component of the electronics industry and solar cell technology, the defects that occur in perovskite films due to uncontrollable crystallization and the fragility of ionic compounds remain serious limitations. This present study focused on synthesising the perovskite Cs0.1MA0.9PbI3 active layer with tailored configurations by transition metal sulphides (both pure and V-doped WS2 and MoS2) to enhance the device characteristics of perovskite solar cells (PSCs). By optimizing the organic–inorganic interface, the power conversion efficiency (PCE) of the optimised V-doped WS2-doped PSC increased by 48% to reach an impressive 15.62%, representing a significant improvement from pure Cs0.1MA0.9PbI3. This enhanced output originates from the high photon absorption capability of V-doped WS2 and the efficient low-dimensional charge transport pathways, together which effectively increase the generation, separation, and collection of charge while minimizing recombination loss. In long-term stability testing, the optimized device retained 80% and 76% of its PCE after 1000 h under continuous illumination and at 70oC, respectively. The proposed V-doped MS2- and WS2-based design offers reliable interfacial energy alignment and enriched charge transport, while also exhibiting great promise for scalable processing, positioning it as a useful candidate for next-generation energy conversion technologies.