Domain morphology and vertical polarization at vortex cores in c-oriented epitaxial SrBi2Nb2O9 thin films

Abstract

Ferroelectric domain configurations in epitaxial thin films play a critical role in determining their switching and electromechanical behavior. In particular, vortex-like domain structures have attracted attention because they can host localized polarization states that differ from the surrounding matrix. Here, epitaxial c-oriented SrBi2Nb2O9 (SBN) thin films were investigated using atomic force microscopy and piezoresponse force microscopy to resolve in-plane domain variants and vortex-like junctions at the nanoscale. The SBN film exhibits a low out-of-plane remanent polarization (∼2.5 µC cm−2), consistent with its c-axis orientation and predominantly in-plane spontaneous polarization. In the ferroelectric domain structure of the SBN thin film, a vortex domain was formed by domains formed within the in-plane. Local switching spectroscopy performed at the vortex cores reveals an enhanced out-of-plane electromechanical response compared to the surrounding in-plane domains, indicating a localized out-of-plane electromechanical response that may be associated with a vertical polarization component. These results provide insight into flux-closure–like domain configurations in c-oriented SBN thin films and their localized electromechanical behavior, which may provide useful insight for future nanoscale functional devices, although further verification is required.

Graphical abstract: Domain morphology and vertical polarization at vortex cores in c-oriented epitaxial SrBi2Nb2O9 thin films

Transparent peer review

To support increased transparency, we offer authors the option to publish the peer review history alongside their article.

View this article’s peer review history

Article information

Article type
Paper
Submitted
14 Aug 2025
Accepted
28 May 2026
First published
11 Jun 2026

Phys. Chem. Chem. Phys., 2026, Advance Article

Domain morphology and vertical polarization at vortex cores in c-oriented epitaxial SrBi2Nb2O9 thin films

E. Lee and J. Y. Son, Phys. Chem. Chem. Phys., 2026, Advance Article , DOI: 10.1039/D5CP03117F

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements