Controlling Quantum Materials by Growth: Thermodynamics, Kinetics, and Defect Engineering in Transition Metal Dichalcogenides

Abstract

Transition metal dichalcogenides (TMDs) exhibit a wide range of semiconducting, metallic, correlated, and topological electronic states arising from strong coupling between lattice structure, dimensionality, and electronic degrees of freedom. In these materials, crystal growth is not merely a preparative step but a thermodynamic boundary condition that establishes chemical potentials, defect populations, polytype stability, and access to metastable phases. As a result, synthesis strongly influences the structural and defect landscape from which collective electronic behavior emerges. In this Review, we develop a unified thermodynamic--kinetic framework that connects growth conditions to phase stability, defect energetics, and microstructure. We examine how chemical-potential constraints define stability windows, how supersaturation and mass-transport regimes govern nucleation and morphology, and how nonequilibrium pathways enable kinetic trapping and polymorph selection. Bulk and thin-film synthesis approaches, including chemical vapor transport (CVT), flux growth, physical vapor transport (PVT), solvent-assisted crystallization, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE), are placed within a common thermodynamic--kinetic map to clarify how distinct growth regimes produce characteristic disorder profiles and structural phases. By explicitly linking synthesis variables to charge-density-wave order (CDW), superconductivity, band topology, and correlation effects, this Review highlights crystal growth as a central parameter in shaping the effective electronic Hamiltonian realized experimentally. This perspective provides a physically grounded framework for improving reproducibility and guiding deterministic control of emergent quantum phases in layered materials.