Highly efficient dual-wavelength InGaN-based light-emitting diodes for 107% NTSC color gamut display backlight module

Abstract

In this report, we designed and fabricated an InGaN-based dual-wavelength light-emitting diode (LED) for a wide gamut and energy-efficient backlight module. According to the two-dimensional drift-diffusion charge control simulation model, the green single quantum well should be placed on the n-side of the blue multiple quantum wells in the active region to achieve the specific intensity ratio between the blue and the green peaks at a lower injection current density. The suggested epitaxial structure was grown on a patterned sapphire substrate and fabricated into a horizontal-type LED chip. The bare chip exhibits a wall-plug efficiency of 46% at a current density of 10 A/cm². After packaging with the dispensed K2SiF6:Mn4+ red phosphor, the color coordinates of the white LED module meet the D65 white point, and a 107% NTSC gamut coverage is achieved with commercial color filters.