PbS Quantum Dot Film as Hole Transport Layer for Self-Powered AgBiS 2 Nanocrystal Photodetectors
Abstract
We fabricated an all-inorganic self-powered photodetector based on ZnO/AgBiS2/PbS-EDT. Compared with the reference device employing Spiro-OMeTAD as the hole transport layer (HTL), the PbS-EDT HTL has higher stability, electrical conductivity and favourable near-infrared light absorption. Consequently, the asfabricated photodetector exhibits superior photovoltaic performance, stability and photoresponsivity over the reference device.
Please wait while we load your content...