A Halide Perovskite/Nb:SrTiO3 Heterojunction-based Interfacial-Type Memristor

Abstract

Halide perovskite-based memristors have garnered significant attention for artificial vision systems due to their exceptional optoelectrical properties and synaptic potential. While most prior studies have focused on filamentary-type memristors, their practical applications are hindered by instability and poor uniformity, stemming from the stochastic nature of conductive filament formation and rupture. To address these limitations, we propose an interfacial-type memristor based on a halide perovskite/Nb:SrTiO 3 (NSTO) single crystal heterojunction. The fabricated Au/Cs 2 AgBiBr 6 /NSTO/In device demonstrates stable resistive switching behavior with remarkable endurance (> 2000 cycles under pulse voltage switching operation). Combined experimental investigation of current-voltage (I-V) characteristics and first-principles density functional theory (DFT) calculations reveal that the switching mechanism could originate from ionic migration-induced interfacial barrier modulation. Furthermore, the device exhibits self-powered photoresponse characteristics and demonstrates the potential for optoelectrical logic gate applications. Synaptic functionality is also investigated, with CrossSim simulations based on experimental long-term potentiation/depression data achieving a recognition accuracy of 95.38% for the Modified National Institute of Standard and Technology (MNIST) dataset. These findings highlight the halide perovskite/NSTO heterojunction as a promising platform for developing high-performance memristors with multifunctional capabilities.