High-Performance Bifunctional Near-Infrared Diode Enabled by Intentional Manipulation of Energy Transfer and Carrier injection with a Hetero-Active-Layer

Abstract

The realization of integrating the generation and reception of optical signals into a single device in the near-infrared (NIR) region is of great value for the biometric application. However, existing semiconductors have limitations in material synthesis and device fabrication that prevent the fabrication of high-performance integrated devices at low cost. Here, we propose a bifunctional near-infrared hetero-diode based on FAPbI3/CdSe QDs. The QDs exhibit efficient Förster resonance energy transfer (FRET) to the perovskite. While the hole injection barrier due to the deeper valence band of the QDs regulates the number of injected holes, resulting in a more balanced carrier injection. The hetero-diode has improved its EQE from 16.9% to 21.6% as an emitter compared to the FAPbI3 diode, and with an improved on/off ratio from 2 × 102 to 3 × 103 as a sensing unit. This study opens up a new way of improving the performance of bifunctional devices.