Non-volatile resistive switching characteristics in Cu2−xS-based memristor

Abstract

Memristors have emerged as promising candidates for high-density non-volatile memory and neuromorphic computing due to their simple structure and low power operation. However, conventional memristive switching devices often require a lot of energy for fabrication processes and high operating voltages, which not only hinder integration with flexible substrates but also impose substantial limitations on overall energy efficiency. In this study, we demonstrated a memristive switching device based on copper sulfide (Cu_2−xS), fabricated through a room-temperature sulfurization synthesis process. Localized phase transitions induced within the Cu_2−xS matrix enable stable and reproducible resistive switching. The device exhibits reliable non-volatile memory performance with a high ON/OFF current ratio (>10⁴), low set voltage (∼0.5 V), and stable retention exceeding 1400 seconds. These findings highlight that Cu_2−xS is a scalable and integration-friendly material for next-generation memory arrays and neuromorphic computing systems.