Second-harmonic generation in OP-GaAs0.75P0.25 heteroepitaxially grown from the vapor phase

Abstract

Second-harmonic generation using femtosecond pulses at 5.5 μm with a repetition rate of 80 MHz is demonstrated in ∼500 μm-thick layers of orientation-patterned GaAs_0.75P_0.25 grown using hydride vapor phase epitaxy on a structured GaAs template. The length of the sample used (∼500 μm) corresponds to only 4 quasi-phase matching periods of 8 coherence lengths.