Performance improvement of resistive switching memory achieved by reducing the size of MoS2 embedded in poly(vinyl alcohol) films

Abstract

This research investigates the resistive switching (RS) properties of resistive random-access memory (RRAM) devices incorporating MoS₂ quantum dots (QDs) and MoS₂ nanosheets. The analysis reveals that reducing the size of MoS₂ nanosheets to the size of QDs enhances the bandgap, surface–volume ratio, and the number of edge states, thereby providing additional electron trapping sites for the formation and rupture of conductive filaments (CFs) in RRAM devices. The Al/MoS₂ QDs–PVA/ITO/glass devices exhibit enhanced switching ratios and memory windows in comparison to RRAM devices based on MoS₂ nanosheets. The enhanced RS performance of the MoS₂ QDs can be attributed to their ultra-small size, which enables the concentration of the surrounding electric field and a higher density of sulfur vacancies that facilitate the formation of CFs. However, it is important to highlight that high-temperature RS performance tests indicate a decline in device performance as the temperature increases. The findings presented herein demonstrate that the utilization of MoS₂ QDs provides a novel avenue for significantly enhancing the data storage capacity of MoS₂-based RRAM devices.