Issue 26, 2024

Low-voltage polymer monolayer transistors for high-gain unipolar and complementary logic inverters

Abstract

Cutting-edge integrated circuits based on organic transistors, though promising, encounter a notable obstacle due to their tendency for high power consumption, thereby constraining their broader practical applications. This study demonstrates low-voltage polymer monolayer thin-film transistors (TFTs) and high-gain logic inverters, wherein the utilization of thin films of AlOx as gate dielectrics effectively enhances the gate controllability of TFTs. A photolithography-compatible method using a sacrificial layer is proposed to pattern the polymer monolayer, which significantly reduces off-state and gate leakage currents to 10−12 A and achieves a steep subthreshold swing of 86 mV dec−1. These device performances generate a maximum intrinsic gain of 104 V/V, enabling the development of zero-VGS-load logic inverters with voltage gains up to 251 V/V at a −3 V operation voltage (VDD). Additionally, hybrid complementary inverters by integrating with amorphous indium gallium zinc oxide (IGZO) exhibit ultra-high voltage gains of 841 V/V at a VDD of 5 V and 7436 V/V at a VDD of 30 V, potentially setting a new benchmark for logic inverters across various semiconductor systems. These results open new avenues for advancements in low-voltage organic and hybrid logics tailored for portable and wearable electronics.

Graphical abstract: Low-voltage polymer monolayer transistors for high-gain unipolar and complementary logic inverters

Supplementary files

Article information

Article type
Communication
Submitted
26 Apr 2024
Accepted
24 May 2024
First published
25 May 2024

J. Mater. Chem. C, 2024,12, 9562-9570

Low-voltage polymer monolayer transistors for high-gain unipolar and complementary logic inverters

M. Cheng, Y. Zhang, L. Zheng, J. Zhang, Y. Xie, Q. Jin, Y. Tian, J. Wang, H. Xiao, C. Dou, Z. Yang, M. Li, L. Li and M. Liu, J. Mater. Chem. C, 2024, 12, 9562 DOI: 10.1039/D4TC01715C

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