Issue 45, 2023

Defect-induced deep red luminescence of CaGdAlO4-type layered perovskites: multi-cationic sites partial/full substitution and application in pc-LED and plant lighting

Abstract

A series of CaGdAlO4-type layered perovskite phosphors showing deep red luminescence (λem = 711 nm, λex = 338 nm) were synthesized via a solid-state reaction. A comprehensive analysis performed via photoluminescence, X-ray photoelectron spectroscopy, thermoluminescence, and fluorescence decay revealed that the deep red luminescence is related to oxygen defects and particularly oxygen interstitials. The defect-related luminescence was effectively regulated through partial substitution of multi-cationic sites (the Ca2+ site with Mg2+, Sr2+, and Ba2+; the Gd3+ site with La3+, Y3+, and Lu3+) and full substitution of Gd3+ with Y3+. Remarkably, a 383.3% stronger luminescence was obtained through partial substitution with Lu3+, and the quantum yield of luminescence reached 28.74%, which is higher than those values of most previously reported self-luminescent systems. A pc-LED device was fabricated using this phosphor, and the device was shown to have potential application in indoor plant cultivation.

Graphical abstract: Defect-induced deep red luminescence of CaGdAlO4-type layered perovskites: multi-cationic sites partial/full substitution and application in pc-LED and plant lighting

Supplementary files

Article information

Article type
Paper
Submitted
29 Aug 2023
Accepted
10 Oct 2023
First published
21 Oct 2023

Dalton Trans., 2023,52, 16780-16790

Defect-induced deep red luminescence of CaGdAlO4-type layered perovskites: multi-cationic sites partial/full substitution and application in pc-LED and plant lighting

B. Wang, C. Gong, X. Xue, M. Li, Q. Zhu, X. Wang and J. Li, Dalton Trans., 2023, 52, 16780 DOI: 10.1039/D3DT02805D

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