26.35%-Efficiency and high-bifaciality n-TOPCon solar cells enabled by UV-ps laser-induced selective modification of double-layered SiOx/n+-poly-Si passivating contacts
Abstract
Double-layered SiOx/n+-poly-Si films with laterally modulated thickness applied in TOPCon (Tunnel Oxide Passivated Contact) solar cells can reduce recombination, enhance contact quality and decrease risk of paste burn-through of the passivation layer. We utilized laser-induced modification technology coupled with sodium hydroxide (NaOH) etching to fabricate poly-Si films with laterally modulated thickness. This approach can effectively remove the outer SiOx/n+-poly-Si layer and retain the inner SiOx/n+-poly-Si layer (close to the silicon substrate), and reduce parasitic absorption. As a result, the parasitic absorption of the poly-Si layer reduces while maintaining the passivation of the poly-Si layer. The laser-treated area exhibited a low reverse saturation current density (J0) of 4.8 fA cm−2, low metallization-induced recombination (J0,metal) of approximately 49.42 fA cm−2, and low contact resistivity (ρc) of about 2.1 mΩ cm2. Moreover, the increase in short-circuit current density (Jsc) of 0.31 mA cm−2 resulted in a 0.1% gain in efficiency. As a result, a certified power conversion efficiency of 26.35% is achieved for TOPCon solar cells with a selective n+-poly-Si structure, featuring higher current density and bifaciality. Interestingly, the implementation of a selective n+-poly-Si structure in an industrial production line demonstrates high efficiency.