Issue 35, 2021
From the journal:

CrystEngComm

The synthesis and formation mechanism of nonpolar InN nanoplates†

Wenqing Song,ab   Tao Li,a   Lei Zhang,a   Wenhui Zhu*a  and  Liancheng Wang ORCID logo *a  

* Corresponding authors

a State Key Laboratory of High Performance Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha, Hunan, China
E-mail: zhuwenhui@csu.edu.cn, liancheng_wang@csu.edu.cn

b School of Mechanical Engineering, Hunan institute of technology, Hengyang, Hunan 421002, China

Abstract

High-crystal-quality nonpolar indium nitride (InN) nanoplates were synthesized via deploying controllable chemical vapor deposition (CVD) technology using the M-plane of GaN nanowires (NWs) as a template, with features creating a potential advantage for their use in terahertz emitter/detector devices. The formation of the 2D InN nanosheets may have been due to self-limiting epitaxial growth, which is in turn explained by lattice induction theory and surface distortion effects.

Graphical abstract: The synthesis and formation mechanism of nonpolar InN nanoplates

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Article information

DOI
https://doi.org/10.1039/D1CE00981H
Article type
Communication
Submitted
27 Jul 2021
Accepted
07 Aug 2021
First published
09 Aug 2021

CrystEngComm, 2021,23, 5976-5981

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The synthesis and formation mechanism of nonpolar InN nanoplates

W. Song, T. Li, L. Zhang, W. Zhu and L. Wang, CrystEngComm, 2021, 23, 5976 DOI: 10.1039/D1CE00981H

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