Synthesis of nanocrystalline Cu deficient CuCrO2 – a high figure of merit p-type transparent semiconductor

Abstract

The delafossite structured CuCrO₂ system is well known as one of the best performing p-type transparent conducting oxides. In this paper the details of a low temperature facile growth method for CuCrO₂ is described. The dependence of the growth on the precursors, the temperature and oxygen partial pressure are examined. The decomposition routes are critical to obtain the best performing films. The thermopower and electrical measurements indicate p-type films with conductivity ranging from 1–12 S cm⁻¹ depending on the growth conditions. This p-type conductivity is retained despite the nanocrystallinity of the films. The figure of merit of these films can be as high as 350 μS, which is the best performing p-type TCO by solution methods to date. The optical properties are also investigated using ellipsometry and UV-Vis spectroscopy.