Investigation of a high-performance solar absorber and thermal emitter based on Ti and InAs

Abstract

In this paper, we utilize Ti and InAs materials to design a device capable of perfect solar absorption and high thermal emission efficiency. This structure is capable of generating surface plasmon resonance (SPR) and cavity resonance (CR). As this structure produces different combinations of resonances in different bands, high absorption is obtained in the full band range (280–3000 nm). The average absorption rate reaches as high as 96.7% from 280 nm to 3000 nm. The bandwidth where the absorption rate exceeds 90% measures 2720 nm (280–3000 nm). Under AM 1.5 conditions, the weighted average absorption rate is 95.8%. Additionally, this structure is insensitive to the angle of incidence. As the incident angle increases from 0° to 50°, the average absorption remains greater than 90%. Even when the incident angle is increased to 60°, the average absorption rate is 87.1%. Besides the excellent absorption performance, this structure also exhibits good thermal emission performance, with the thermal radiation efficiency reaching as high as 96.5% at 1100 K. These remarkable absorption and thermal radiation properties make this structure highly versatile, with potential applications spanning solar energy collection and radiation-related fields.