Issue 17, 2015

Inverted perovskite solar cells with inserted cross-linked electron-blocking interlayers for performance enhancement

Abstract

Perovskite solar cells fabricated via a solution process have drawn great attention due to their high power conversion efficiency (PCE). Here, we report cross-linked anode interlayers with solvent-resistance that reduce electron–hole recombination by blocking electrons for inverted type solution processed perovskite solar cells. The cross-linkable materials used are (N,N′-bis(4-(6-((3-ethyloxetan-3-yl)methoxy)-hexyloxy)phenyl)-N,N′-bis(4-methoxyphenyl)biphenyl-4,4′-diamine (QUPD) and N,N′-bis(4-(6-((3-ethyloxetan-3-yl)methoxy))-hexylphenyl)-N,N′-diphenyl-4,4′-diamine (OTPD)), which can be cross-linked in the presence of acid groups provided by diffusion from the underlying PEDOT:PSS layer. The resulting PCE shows an improvement from 9.93% (control device) to 13.06% (cross-linked QUPD (X-QUPD)) by about 3% under AM 1.5G 100 mW cm−2 illumination, which demonstrates that the introduction of cross-linked electron blocking interlayers is a promising way to enhance the performance of inverted type solution processed perovskite solar cells.

Graphical abstract: Inverted perovskite solar cells with inserted cross-linked electron-blocking interlayers for performance enhancement

Supplementary files

Article information

Article type
Paper
Submitted
25 Feb 2015
Accepted
17 Mar 2015
First published
18 Mar 2015

J. Mater. Chem. A, 2015,3, 9291-9297

Inverted perovskite solar cells with inserted cross-linked electron-blocking interlayers for performance enhancement

H. Jhuo, P. Yeh, S. Liao, Y. Li, S. Sharma and S. Chen, J. Mater. Chem. A, 2015, 3, 9291 DOI: 10.1039/C5TA01479D

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