Self-assembly of a mesoporous ZnS/mediating interface/CdS heterostructure with enhanced visible-light hydrogen-production activity and excellent stability† †Electronic supplementary information (ESI) available. See DOI: 10.1039/c5sc01586c Click here for additional data file.

We designed and successfully fabricated a ZnS/CdS 3D mesoporous heterostructure with a mediating Zn1–xCdxS interface.


Introduction
Directly transforming solar energy into clean and renewable hydrogen via water splitting while using suitable photocatalysts is especially important for resolving the ever-increasing energy crisis. Various nanomaterials, 1 particularly semiconductors, 2 have been investigated as photocatalytic hydrogen-evolution catalysts since TiO 2 was rst reported to split water into hydrogen. 3 Metal sulde semiconductors exhibit a suitable bandgap (E g ) that corresponds to visible light (approximately 44% of solar energy); 4 they also exhibit excellent photocatalytic activity. 2c,5 Among these sulde semiconductors, CdS has been extensively investigated for hydrogen production because of its suitable E g which is approximately 2.4 eV and its very negative conduction band (CB). 2a,5d,6 However, the fatal drawbacks of CdS, which include (i) a low H 2 -evolution rate and (ii) a very limited lifetime arising from the rapid recombination of photo-excited charge carriers and the oxidization of CdS, respectively, 5d,6a restrict its practical application. As an effective solution to the low H 2 -evolution activity, constructing CdSbased heterojunctions, such as TiO 2 /CdS, ZnO/CdS, g-C 3 N 4 /CdS and ZnS/CdS, 5d,7 has become a widely adopted strategy for improving the spatial separation of photo-generated electron/ hole pairs. Nevertheless, the interface of the semiconductor heterojunction, which is an important factor that affects photocatalytic activity, is rarely investigated. Modulation of the matching of the lattice constant and the band structure in heterojunctions is difficult because of the limited number of candidate semiconductors with an appropriate intrinsic lattice constant and band structure. 8 Consequently, the resulting semiconductor heterojunction may have problems involving large lattice stress, high defect concentration and poor bandstructure matching, which may inhibit the improvement of photocatalytic activity. 9 Inserting a conductive layer (such as Pt) that serves as a transport channel can dramatically improve the interface conductivity. 5b, 8,10 However, the complicated process, poor ability to mediate the interfacial state, and the high cost of noble metals restrict its application.
With respect to the limited photocatalytic stability of CdS, passivation layers and surface modications have been adopted to protect it from oxidation. 7a,11 Both of these methods can increase the lifetime of CdS but at the cost of deteriorating its H 2 -production rate, which is because of the inhibition of photocatalytic reactions by the passivation layer and the contamination of the heterostructure. 5d,7a Indeed, the low H 2 -production activity and limited photocatalytic stability primarily result from the poor separation and transport efficiency of the charge carriers. If we can embed a modulating interface with a tunable lattice constant as well as band structure, and enhance the interface state between the semiconductor heterostructure to modify the charge separation and transport time and efficiency, 12 the H 2 -evolution rate and photocatalytic stability could be effectively improved simultaneously. 5d,13 Therefore, developing a semiconductor heterostructure with high photocatalytic activity and stability via carefully mediating the interface state is a subject of especial importance from both scientic and practical perspectives.
In view of the aforementioned ideas, a ZnS/CdS porous heterostructure with a mediating interfacial layer acting as a transport channel (Scheme 1a) has been prepared using cation exchange 14 and post-annealing methods on the basis of the following points: (i) ZnS/CdS exhibits quasi-type II characteristics and efficient photocatalytic hydrogen evolution because of the acceptor states (I s , V Zn ) in ZnS. 5d Moreover, the extensively investigated Zn 1Àx Cd x S with tunable parameters and lower acceptor states than those in ZnS was selected as an interfacial layer; 15 (ii) ZnS-ethylenediamine (ZnS(en) 0.5 ) was adopted as a template for fabricating the porous ZnS/Zn 1Àx Cd x S/CdS heterojunction, 16 which is especially important for the watersplitting reaction because of its surface reaction characteristics; 5a,c,17 (iii) a post-annealing process, which has been widely employed to improve the properties of oxides but has rarely been used in sulde heterojunctions, 16a,18 was adopted to improve the interface state and photocatalytic activity of the heterostructure sample whilst maintaining its heterojunction.
Herein, a ZnS/Zn 1Àx Cd x S/CdS three-dimensional (3D) mesoporous heterostructure that exhibited a very high charge separation efficiency and H 2 -evolution rate was designed and successfully fabricated for the rst time. The mediating Zn 1Àx Cd x S interface, which possessed a tunable lattice constant and band structure, acted as the charge-carrier transport channel, which favored the improvement of the charge separation efficiency. Moreover, the H 2 -production rate and the stability of the heterostructure involving two suldes were dramatically improved simultaneously via the careful modication of the interface state via a simple post-annealing method.
The sample prepared with the optimal parameters exhibited an excellent H 2 -production rate of 106.5 mmol h À1 g À1 under visible light, which was considerably greater than that of the other previously reported CdS-based photocatalysts. Moreover, the heterostructure exhibited excellent photocatalytic stability over a period of 60 h. The well-modulated interface state is responsible for the substantially improved photocatalytic activity and stability.

Results and discussion
ZnS(en) 0.5 nanosheets, which were synthesized using a modi-ed solvothermal method, 2c were reacted with different concentrations of Cd 2+ at 140 C. A series of samples with nominal Cd/Zn molar ratio X were labeled as ZCX (X ¼ 0, 2, 6, 10, 30, 40, 75 at%). Scheme 1b shows the morphology evolution of the ZnS/Zn 1Àx Cd x S/CdS nanoframe with increasing Cd/Zn ratio. The ZnS(en) 0.5 nanosheets were transformed into disordered porous ZnS with the gradual dissolution of EDA molecules (Fig. S1 †), which then reacted with Cd 2+ and formed the regular rectangular nanoframe ZnS/Zn 1Àx Cd x S/CdS heterostructure. As conrmed by the time dependence of the microstructure ( Fig. S2 †), Cd 2+ sculpted the ZnS(en) 0.5 nanosheets layer-by-layer and the rectangular nanoframe morphology was nally synthesized via a self-assembly process (Scheme 1c and Fig. S3 †) because of the larger size of the ZnS(en) 0.5 nanosheets compared to the reaction-zone width. 19 As shown in Scheme 1c, the rectangular nanoframe was transformed into nanosheets with the Cd 2+ content increasing from 10 to 75 at% ( Fig. S3 †), with ZC30 possessing a 3D porous microstructure constructed by nanoframes connected with porous nanosheets ( Fig. 1a and c). To further improve its interface state, ZC30 was postannealed at different temperatures; the resulting samples were abbreviated as ZC30-Y (Y ¼ 450, 500, 550, 650 C). Scheme 1d shows the cross-section microstructural evolution of ZC30 at different post-annealing temperatures. The post-annealing process at higher temperatures may have facilitated the reaction between ZnS, CdS and the Zn 1Àx Cd x S interfacial layer, and decreased the Cd 2+ concentration in the interface solid solution and the size of the CdS quantum dots (CdS QDs). ZC30-500 exhibited a similar microstructure, although it is less porous when compared to pristine ZC30 ( Fig. 1b and d); in contrast, ZC30-650 presented a denser and destructed microstructure (Fig. S3f †). As shown in the energy-dispersive X-ray (EDX) spectrum ( Fig. S4 †), the ratio of Cd/(Zn + Cd) in the ZC10 and ZC30 samples from the EDX results was very near to the setting value, which indicated that Cd 2+ reacted with sufficient ZnS via a cation exchange reaction. However, the samples with a larger Cd 2+ content showed a much smaller ratio of Cd/(Zn + Cd) than the setting value, which may have been attributed to the inhibited reaction between ZnS and Cd 2+ by the interfacial layer. Especially, for the heterostructure sample with a Cd/Zn ratio of 150 at%, the Cd/(Zn + Cd) ratio from the EDX results (79.2 at%) did not increase dramatically in comparison with ZC95. Moreover, no remarkable composition variation was observed in the post-annealed samples (Fig. S5 †). The X-ray diffraction (XRD) patterns of the samples with incremental Cd 2+ content (Fig. S6a †) showed an increase of hexagonal and cubic phases of CdS resulting from the limited S source. 20 However, the characteristic peak of ZnS did not disappear even in ZC75, further conrming that the interfacial solid solution inhibited complete cation exchange between ZnS and Cd 2+ . Moreover, the peak corresponding to Zn 1Àx Cd x S slightly shied to lower 2-theta values with increased Cd 2+ content, and ZC30 exhibited a similar phase structure but with shied peak positions compared to those of a ZnS and CdS mechanical mixture (Fig. S7 †), thereby indicating the formation of a Zn 1Àx Cd x S phase. As shown in Fig. S6b, † the post-annealing process dramatically improved the crystallinity of ZC30 without the formation of any extra phases. The peak corresponding to Zn 1Àx Cd x S shied to higher 2-theta values with increasing temperature, indicating that the content of Cd in Zn 1Àx Cd x S decreased because of the reaction between ZnS and the interfacial layer at high temperatures. Fortunately, the ZnS/Zn 1Àx Cd x S/CdS heterostructure was well maintained even at 650 C because of the presence of the interface.
To further conrm the ZnS/Zn 1Àx Cd x S/CdS heterostructure in the as-prepared samples, element mapping and high-resolution TEM (HRTEM) were used to investigate the element distribution and phase structure of ZC30 ( Fig. 1e and f). S and Zn were distributed evenly throughout the entire skeleton of the nanoframe, whereas Cd was primarily distributed at the edge of the nanoframe; this result was further conrmed by the smaller ratio of Cd/Zn at the center of the nanoframe (Fig. S8 †). As shown in Fig. 1f, the lattice fringe of the nanoregion centralized at the edge of the nanoframe could be indexed as CdS. The lattice constant of Zn 1Àx Cd x S surrounding the CdS QDs increased as the distance to the CdS nanoregion increased, and the lattice fringe of ZnS was observed far from the CdS nanoregion. This composition gradient (corresponding to different band structures) and the in situ formation of a stably embedded interface could reduce heterostructure stress and defect concentration and hence improve the separation and transport efficiency of the charge carriers. 9a,b Compared with the pristine ZC30, the ZC30-500 possessed a higher crystallinity with smaller CdS QDs. Fortunately, the CdS QDs could still be observed in ZC30-650 (Fig. S9 †), indicating the important role of the interface in maintaining the ZnS/Zn 1Àx Cd x S/CdS heterostructure.
The effects of the Cd 2+ concentration and post-annealing process on the band structure of the ZnS/Zn 1Àx Cd x S/CdS heterostructure were investigated using UV-visible diffuse reection spectroscopy and are exhibited in Fig. 2a. The band edge of the heterostructure dramatically shied to longer wavelengths in the sample with only 10 at% Cd 2+ . All of the samples exhibited similar E g irrespective of the Cd 2+ loading, which was in complete contrast to the E g values of the Zn 1Àx Cd x S solid solution. 12a This result may have been attributed to the formation of CdS QDs resulting from the cation-exchange characteristics and the larger radius of Cd 2+ (0.97Å) relative to that of Zn 2+ (0.74Å). 14a,21 Notably, the spectra of ZC10 and ZC30 showed two band edges, and the entire diffuse reection spectra were divided into two regions, with regions I and II corresponding to absorption in the UV and visible regions, respectively. E g s in the visible and UV regions were calculated by the Kubelka-Munk (KM) method (Fig. S10 †) and shown in the inset of Fig. 2a. The E g in region I, which represented the Zn 1Àx Cd x S solid solution, decreased with increasing Cd 2+ concentration, which was consistent with the XRD results. The E g s in region II didn't change dramatically for the samples ranging from ZC10 to ZC75. ZC30-500 showed a slightly larger E g of CdS (2.50 eV) than that in ZC30 (2.37 eV). This can be explained by the decreased size of the CdS QDs (Fig. S9a †) resulting from the reaction between a small amount of CdS and the interfacial layer. 21 When further increasing the temperature to 650 C, the drastic reaction of Zn 1Àx Cd x S in ZC30-650 as conrmed by the XRD patterns ( Fig. S6 †) dramatically increased its band gap from 2.37 to 2.79 eV. The nitrogen and water vapor adsorption/ desorption isotherms of the photocatalysts with different Cd concentrations are presented in Fig. 2b. ZC30 exhibited the highest water vapor and N 2 adsorption volumes and a specic surface area (S BET ) of 105 m 2 g À1 (Fig. S11 †), which was much larger than the other photocatalysts. 2c,15,22 Fortunately, ZC30-500 exhibited a relatively high S BET of 43.6 m 2 g À1 , whereas ZC30-650 showed a very low S BET of 14.5 m 2 g À1 (Fig. S12 †).
The photocatalytic production of H 2 by ZnS/Cd x Zn 1Àx S/CdS heterostructures with different Cd 2+ content was compared under visible-light irradiation (l $ 420 nm) (Fig. 3a). 2c In contrast to the negligible visible-light hydrogen evolution activity in mesoporous ZnS, the H 2 -production rate drastically increased with the content of Cd 2+ increasing from 2 to 30 at%. Further increasing of the amount of Cd led to a reduction in the H 2 -production activity. ZC30 exhibited the highest H 2evolution rate of 34.2 mmol h À1 g À1 . The interface with a suitable band structure and lattice constant in ZC30 acted as a transport channel and increased the photocatalytic activity, whereas excess CdS may have acted as charge recombination centers and decreased the photocatalytic activity. Moreover, the maximum S BET and water vapor adsorption of ZC30 increased the number of reaction sites and the absorption capacity for photons and water molecules. The charge-carrier separation and transport efficiencies were further conrmed via electrochemical impedance spectroscopy (EIS) (Fig. S13 †). The spectrum of ZC30 showed a smaller semicircle in the middle-frequency region when compared to ZC75 and CdS, indicating that it possessed the fastest interfacial electron transfer arising from the well-modulated interfacial layer. To qualitatively conrm the extremely important role of the interfacial layer on the H 2 -production activity, a sulfur source (Na 2 S) was added with the Cd 2+ to inhibit the formation of the Zn 1Àx Cd x S interface layer. 5d,23 As shown in Fig. S14, † both the intensity of the CdS and ZnS phase got stronger with an increasing amount of the sulfur source. Correspondingly, the H 2 -production activity decreased dramatically because of the inhibited formation of Zn 1Àx Cd x S.
The post-annealing method, which has been extensively employed to improve the properties of oxides but has rarely been applied to sulde heterojunctions, 16a,19 was adopted to investigate the effects of interfacial states on the photocatalytic H 2 -evolution activity of ZC30. As shown in Fig. 3b, the photocatalytic H 2 -evolution activity rst increased and then decreased with increasing post-annealing temperatures. ZC30-500 exhibited the maximum H 2 -evolution rate of 106.5 mmol h À1 g À1 , which was 152 and 966 times greater than those of CdS prepared using ethylenediamine and deionized water as the solvent, respectively (Fig. S15 †). In contrast, at higher temperatures, more ZnS and CdS reacted with the Zn 1Àx Cd x S interface which drastically increased the E g and the thickness of the interfacial layer, and hence, decreased the photocatalytic activity. Moreover, the deteriorated microstructure and substantially decreased S BET was another explanation for the depressed H 2 -evolution activity in the samples prepared at higher temperatures. The photocatalytic H 2 -production activity of ZC30-500 was considerably higher than the other CdS-based photocatalysts (Table S1 †), 2a,5d,6b,7,16a,24 indicating the extremely important role of the mediated interfacial state in improving the charge-separation efficiency and photocatalytic activity. The result of the comparison between the photocatalytic stabilities of pristine ZC30 and ZC30-500 measured without renewing the sacricial solution is presented in Fig. 3c. The pristine ZC30 exhibited a relatively good stability of 20 h because of the intimate heterojunction, efficient spatial charge separation and suitable band-structure matching. 12a Interestingly, ZC30-500 exhibited a considerably higher H 2 -production rate and longer photocatalytic lifetime over 60 h in comparison to ZC30 because of its faster interfacial electron transfer as conrmed by its much smaller semicircle in the middle-frequency region (Fig. S13 †). This result was attributed to the further improvement of interface state via the post-annealing process, thereby conrming the hypothesis that the improved interface state could simultaneously enhance photocatalytic activity and stability. Neither the microstructure nor the XRD patterns of ZC30-500 exhibited distinct variations aer 60 h of photocatalytic reaction (Fig. S16 †), further conrming its excellent photocatalytic stability.
The mechanism for the separation and transport of photongenerated charge carriers in the heterostructure is shown in Fig. 3d. Photo-generated holes from the valence band (VB) of CdS transferred to the defect states of the interfacial Zn 1Àx Cd x S layer, which then transferred into the acceptor states of ZnS because of the lower acceptor states (V Zn , I s ) in Zn 1Àx Cd x S than those in ZnS. The defect states related acceptor levels in ZnS and Zn 1Àx Cd x S were conrmed by the photoluminescence (PL) spectra (Fig. S17 †). All of the heterostructure samples and the solid solution samples prepared via a thermolysis method 16a with different amounts of Cd 2+ showed a similar peak position of the emission derived from different defect states (such as V Zn ) when compared to that in ZnS. These results indicated the constant energy level of the defect states in ZnS, heterostructure and solid solution samples with respect to their CB edge. These results were consistent with previous publications, 5d,15 which reported that the peak position of the emission derived from the  defect states (such as V Zn ) in Zn 1Àx Cd x S is similar to that in ZnS and doesn't change with the variation of E g s derived from the different amounts of Cu 2+ dopant. Consequently, the semiconductor with a lower CB edge possesses a lower defect (such as I s and V Zn ) related acceptor level. Meanwhile, the photoexcited electrons from the interfacial Zn 1Àx Cd x S layer transferred to the CB of the CdS QDs, which was located on the outside of the heterostructure. As a result, the excellent photocatalytic activity and stability in the ZnS/Zn 1Àx Cd x S/CdS heterostructure may have been a consequence of the combined effects of the following three factors: (i) the mediated Zn 1Àx Cd x S layer exhibited tunable parameters and lower acceptor states (such as V Zn ) when compared to ZnS, which dramatically improved the matching between ZnS and CdS, and the separation efficiency of the photo-generated charge carriers; (ii) the post-annealing process drastically improved the interface state and the crystallinity of the ZnS/Zn 1Àx Cd x S/CdS heterostructure and enhanced the charge separation and transport efficiency; and (iii) the large S BET of 105 m 2 g À1 and interconnected 3D network in the mesoporous heterojunction drastically increased the number of the reaction sites.

Conclusions
In summary, for the rst time, we designed and successfully fabricated a ZnS/CdS 3D mesoporous heterostructure with a mediating Zn 1Àx Cd x S interface that serves as a charge carrier transport channel. ZnS(en) 0.5 functions as both a template for the fabrication of a highly porous 3D interconnected network and as the Zn and S sources for the in situ formation of a stably embedded Zn 1Àx Cd x S interfacial layer. Furthermore, the H 2production rate and the stability of the heterostructure are simultaneously improved by the careful modication of the interface state via a simple post-annealing method. The sample prepared with the optimal parameters exhibits an excellent H 2production rate of 106.5 mmol h À1 g À1 under visible light, which is 152 and 966 times higher than CdS prepared using ethylenediamine and deionized water as the solvent, respectively, and is considerable higher than other CdS-based photocatalysts. Moreover, this heterostructure shows excellent photocatalytic stability over 60 h. This work not only proposed a new strategy for fabricating a water-splitting catalyst with high photocatalytic activity via modulating the interface state but also provides a new general route to improve the photocatalytic activity and stability of heterostructures for the effective utilization of solar energy.