Unraveling the relationship between the phenethylammonium-induced 2D phase on the perovskite surface and inverted wide bandgap perovskite solar cell performance

Abstract

Two- and three-dimensional (2D/3D) heterojunctions have been widely used to improve the performance of n-type/intrinsic/p-type (NIP) structured perovskite solar cells (PSCs). However, the electron blocking nature of the 2D ligands, such as phenethylammonium (PEA+), on the perovskite surface is not conducive to PSCs with a p-type/intrinsic/n-type (PIN) structure. In this work, we improve the device performance by eliminating the 2D phase on the perovskite surface through the subsequent annealing process. After eliminating the 2D phase, a dipole layer forms with the remaining PEA+, resulting in an excellent energy level alignment between the perovskite and electron transport layer. As a result, the solar cells with the PIN structure using a 1.67 eV wide-bandgap triple-cation perovskite show an enhanced power conversion efficiency of 20.61% with a short circuit current density of 20.05 mA cm−2 and a fill factor of 81.57%. Furthermore, the open-circuit voltage (VOC) is improved from 1.20 V to 1.26 V, yielding a VOC deficit of 410 mV, which represents one of the lowest values among the PIN structured wide-bandgap PSCs.

Graphical abstract: Unraveling the relationship between the phenethylammonium-induced 2D phase on the perovskite surface and inverted wide bandgap perovskite solar cell performance

Supplementary files

Article information

Article type
Paper
Submitted
16 May 2024
Accepted
27 Sep 2024
First published
01 Oct 2024

Energy Environ. Sci., 2024, Advance Article

Unraveling the relationship between the phenethylammonium-induced 2D phase on the perovskite surface and inverted wide bandgap perovskite solar cell performance

X. Huo, S. Mariotti, Y. Li, T. Guo, C. Ding, P. Ji, S. Yuan, T. Li, N. Meng, X. Liu, J. Zhang, I. N. Rabehi, Y. Zhang, S. Zhao, H. Wang, D. Song, L. K. Ono, Z. Xu and Y. Qi, Energy Environ. Sci., 2024, Advance Article , DOI: 10.1039/D4EE02133A

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