Low temperature atomic layer deposition of boron nitride using the in situ decomposition of ammonium carbamate

Abstract

Here, we report on a new atomic layer deposition (ALD) process for the growth of amorphous boron nitride thin films at low temperatures (100–275 °C) using carbamic acid, a highly reactive intermediate species found in the decomposition of ammonium carbamate, as the nitrogen source.

Graphical abstract: Low temperature atomic layer deposition of boron nitride using the in situ decomposition of ammonium carbamate

Supplementary files

Article information

Article type
Communication
Submitted
08 May 2025
Accepted
26 Jun 2025
First published
27 Jun 2025

Chem. Commun., 2025, Advance Article

Low temperature atomic layer deposition of boron nitride using the in situ decomposition of ammonium carbamate

A. Álvarez-Yenes, V. O. Koroteev, M. R. Ryzhikov, M. Ilyn, S. G. Kozlova and M. Knez, Chem. Commun., 2025, Advance Article , DOI: 10.1039/D5CC02613J

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