Ultralow detection limit and high sensitivity X-ray detector of high-quality MAPbBr3 perovskite single crystals

Abstract

High-quality semiconductor single crystal materials play a significant role in achieving excellent photoelectric performance, fundamental to high-performance X-ray detectors. To mitigate the impact of temperature gradients and auxiliary substances, we developed a vacuum evaporation crystallization method. This method synthesizes high-quality MAPbBr₃ single crystals with outstanding photoelectric properties, including a long carrier lifetime (1150 ns), low trap-state density (2.28 × 10⁹ cm⁻³), and high carrier mobility (130 cm² V⁻¹ s⁻¹). A planar MAPbBr₃/Pt structure for an X-ray detector was designed and constructed, demonstrating a superior detection sensitivity of 24 552 μC Gy⁻¹ cm⁻² and an ultralow detection limit of 54 nGy s⁻¹. Furthermore, even after being stored in ambient air at room temperature for 200 days, the unencapsulated detector retained 97.1% of its original photocurrent response under a dose rate of 21.09 μGy s⁻¹. These results indicate that high-quality MAPbBr₃ single crystals are promising candidates for high-performance X-ray detectors.