Issue 19, 2012

Morphology-controllable synthesis and enhanced luminescence properties of β-NaLuF4:Ln (Ln = Eu, Tb and Ce/Tb) microcrystals by solvothermal process

Abstract

Controlled synthesis of β-NaLuF4 with uniform morphology, dimension and considerable monodispersity was designed via a gentle solvothermal process by using ethylenediamine (EDA) and ethylene glycol (EG) as the mixed solvent and NaNO3 as a mineralizer. X-ray diffraction (XRD), field scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), energy dispersive X-ray spectra (EDS) and down-conversion (DC) photoluminescence spectra were used to characterize the samples. The results indicate that the as-prepared β-NaLuF4 microcrystals can be rationally modified in phase, size and morphology by tuning the solvent constitution, NaNO3 content, and reaction time. Moreover, the crystal growth process was thoroughly discussed through a series of time-dependent experiments and a possible formation mechanism was proposed. Furthermore, the DC luminescence properties as well as the emission mechanisms of β-NaLuF4:Ln3+ (Ln = Eu, Tb and Ce/Tb) microcrystals were systematically investigated. It is found that the DC luminescence properties can be improved observably by introducing Ce3+ into the β-NaLuF4 microcrystals and the doping concentration of the Ce3+ is optimized under a fixed concentration of Tb3+. It is expected that the synthesis strategy can be applied to prepare many other types of micro- and nano-crystals as well.

Graphical abstract: Morphology-controllable synthesis and enhanced luminescence properties of β-NaLuF4:Ln (Ln = Eu, Tb and Ce/Tb) microcrystals by solvothermal process

Supplementary files

Article information

Article type
Paper
Submitted
13 Apr 2012
Accepted
11 Jun 2012
First published
13 Jun 2012

RSC Adv., 2012,2, 7569-7577

Morphology-controllable synthesis and enhanced luminescence properties of β-NaLuF4:Ln (Ln = Eu, Tb and Ce/Tb) microcrystals by solvothermal process

F. He, N. Niu, Z. Zhang, X. Zhang, D. Wang, L. Bai, S. Gai, X. Li and P. Yang, RSC Adv., 2012, 2, 7569 DOI: 10.1039/C2RA20675G

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