Issue 11, 2011
From the journal:

Energy & Environmental Science

Non-covalent doping of graphitic carbon nitride polymer with graphene: controlled electronic structure and enhanced optoelectronic conversion†

Yuanjian Zhang,*a   Toshiyuki Mori,a   Li Niu*b  and  Jinhua Yea  

* Corresponding authors

a International Center for Young Scientists (ICYS), International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Japan
E-mail: ZHANG.Yuanjian@nims.go.jp

b Engineering Laboratory for Modern Analytical Techniques, c/o State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Renming street 5625, Changchun, P. R. China
E-mail: lniu@ciac.jl.cn

Abstract

By union of graphitic carbon nitride polymer with reduced graphene oxide (rGO, ≤1 wt%) via π–π stacking interaction, the band structure of carbon nitride could be well modulated. As a result, a significant increase of photocurrent was observed (e.g., when biased at 0.4 V vs.Ag/AgCl, the anodic photocurrent became 300% higher after doping). Not merely interesting in itself, graphene was also used as a general dopant for semiconductors in band-structure engineering.

Graphical abstract: Non-covalent doping of graphitic carbon nitride polymer with graphene: controlled electronic structure and enhanced optoelectronic conversion

  • This article is part of the themed collection: Solar energy
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Article information

DOI
https://doi.org/10.1039/C1EE01400E
Article type
Communication
Submitted
02 Apr 2011
Accepted
08 Jul 2011
First published
29 Jul 2011

Energy Environ. Sci., 2011,4, 4517-4521

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Non-covalent doping of graphitic carbon nitride polymer with graphene: controlled electronic structure and enhanced optoelectronic conversion

Y. Zhang, T. Mori, L. Niu and J. Ye, Energy Environ. Sci., 2011, 4, 4517 DOI: 10.1039/C1EE01400E

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