Interfacial defect capture-induced abnormal fluorescence decay lifetime of CsPbBr3/CsPbBr3 nanodisks

Xuebin Zhang; Kaiye Cheng; Qin Xu; Dandan Yang; Haibo Zeng

doi:10.1039/D4CC03918A

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Interfacial defect capture-induced abnormal fluorescence decay lifetime of CsPbBr₃/CsPbBr₃ nanodisks†

Xuebin Zhang,^a Kaiye Cheng,^a Qin Xu,

^a Dandan Yang

*^a and Haibo Zeng

^ab

Author affiliations

* Corresponding authors

^a Institute of Innovation Materials and Energy, School of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou, China
E-mail: dandanyang@yzu.edu.cn

^b MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

Abstract

We employed a two-step temperature-controlled strategy to obtain assembled CsPbBr₃/CsPbBr₃ nanodisks. Compared with conventional CsPbBr₃ quantum dots, surface-state characterizations and exciton dynamics suggested that the interface defect prevented the rapid recombination of excitons, and extended the fluorescence lifetime by nearly 10-times.

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Article information

DOI: https://doi.org/10.1039/D4CC03918A
Article type: Communication
Submitted: 01 Aug 2024
Accepted: 13 Sep 2024
First published: 13 Sep 2024

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Chem. Commun., 2024,60, 11766-11769

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Interfacial defect capture-induced abnormal fluorescence decay lifetime of CsPbBr₃/CsPbBr₃ nanodisks

X. Zhang, K. Cheng, Q. Xu, D. Yang and H. Zeng, Chem. Commun., 2024, 60, 11766 DOI: 10.1039/D4CC03918A

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Chemical Communications