In situ SERS and in situ Raman: deciphering interfacial phenomena and processes

Abstract

Raman spectroscopy and surface enhanced Raman spectroscopy (SERS) are techniques for obtaining fingerprint-like vibrational spectral information from specific substrate surfaces. Attributed to its high sensitivity towards molecular electron density distributions, Raman or SERS employed during chemical reactions can assist in analyzing detailed chemical conversion processes. However, multiple influencing factors impede the development of in situ SERS substrates and in-depth data analysis. To systematically lay out the key issue to facilitate in situ SERS probing, we document the basic principles and recent advances in in situ Raman/SERS for studying surface reactions. The mechanism and influencing factors of SERS are first briefly introduced, and the types of interfacial phenomena, including the transition of species, the alteration of electron densities, the alteration of crystalline structures, are discussed in this review. We have systematically compiled species identifications and Raman spectral features reported in recent in situ studies, which are expected to serve future investigations, particularly those involving advanced computational analysis such as machine learning. Subsequently, the in situ Raman/SERS study of various types of surface reactions is performed. Finally, the challenges and perspectives of in situ SERS in deciphering surface processes are laid out, proposing our insights into future directions and challenges. We expect this review to spread out novel ideas concerning in situ SERS and inspire further studies regarding in situ SERS techniques or surface reaction processes.

Graphical abstract: In situ SERS and in situ Raman: deciphering interfacial phenomena and processes

Supplementary files

Article information

Article type
Review Article
Submitted
05 Feb 2025
Accepted
08 Jul 2025
First published
11 Jul 2025

Mater. Horiz., 2025, Advance Article

In situ SERS and in situ Raman: deciphering interfacial phenomena and processes

J. Wei, S. Yu, T. Zhou, J. Shang, S. Liu, F. Han, X. Li and Q. An, Mater. Horiz., 2025, Advance Article , DOI: 10.1039/D5MH00212E

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