Polarization-Sensitive Photodetector Based on b-AsP/In2Se3 Heterostructure

Abstract

Van der Waals (vdW) heterojunctions, composed of two-dimensional materials, offer competitive opportunities in the design and realization of versatile and high-performance electronic and optoelectronic devices. Polarization-sensitive infrared (IR) photoelectric detection plays an important role in optical communication, environmental monitoring, and remote sensing imaging. Here, we report a mirror electrode-enhanced black arsenic phosphorus (b-AsP) and indium selenide (In2Se3) b-AsP/In2Se3 vdW heterojunction photodetector. The device enables wide-band detection from the solar-blind ultraviolet (SBUV) to the mid-wave infrared (MWIR) spectral range. The excellent performance of the device, including a high photoresponsivity (R) of 4129.3 AW-1, competitive high specific detectivity (D*) of 2.8×1011 cmHz1/2W-1, and very low noise equivalent power (NEP) of 2.8×10-15 WHz−1/2 with 275 nm SBUV light at 1 V bias. Moreover, the device demonstrated a very fast speed with a rise time (τr) of 5.8 μs, decay time (τd) of 2.8 μs, and a high dichroic ratio of ~2.12 with a 637 nm laser. This work provides a way to realize polarization-sensitive detectors with high sensitivity and fast speed.