Issue 17, 2024

Origin of the Cr3+ concentration-dependent broadband near-infrared emission in Sc2Si2O7

Abstract

The challenge of developing phosphors with tailored near-infrared (NIR) emission ranges to meet the diverse demands of various applications is a paramount concern in the contemporary realm of NIR phosphor research. A strong dependence of NIR emission on Cr3+ concentration has been demonstrated in Sc2−xSi2O7:xCr3+, which exhibits an NIR emission band at 840 nm for low Cr3+ doping concentrations (x = 0.001–0.01) and an anomalous NIR emission band at 1300 nm for high Cr3+ doping concentrations (x = 0.01–0.10). Careful investigation of the crystal structure, excitation and emission spectra, and luminescence decay curves indicates that the two NIR emissions can be attributed to the isolated Cr3+ ions and the Cr3+–Cr3+ pairs, respectively. The strong interaction of exchange-coupled Cr3+–Cr3+ pairs is supported by temperature-dependent emission spectra, luminescence decay curves and electron paramagnetic resonance (EPR) measurements. This work provides a new insight into the study of Cr3+–Cr3+ pairs for broadband NIR emission.

Graphical abstract: Origin of the Cr3+ concentration-dependent broadband near-infrared emission in Sc2Si2O7

Supplementary files

Article information

Article type
Communication
Submitted
15 Mar 2024
Accepted
16 Apr 2024
First published
17 Apr 2024

Dalton Trans., 2024,53, 7268-7272

Origin of the Cr3+ concentration-dependent broadband near-infrared emission in Sc2Si2O7

S. Xie, B. Ma, D. Wen, Q. Zeng, Y. Guo and T. Yu, Dalton Trans., 2024, 53, 7268 DOI: 10.1039/D4DT00784K

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