High-quality SiNx thin-film growth at 300 °C using atomic layer deposition with hollow-cathode plasma

Abstract

We report high-quality atomic-layer-deposited SiN_x thin films using a novel remote plasma source, hollow cathode plasma (HCP), at a low temperature of 300 °C. SiN_x films using the HCP source show superior properties to those deposited using inductively-coupled plasma (ICP), a conventional remote plasma source. X-Ray photoelectron spectroscopy and Auger electron spectroscopy analyses reveal that the SiN_x film grown using the HCP source has a higher N/Si ratio, a lower oxygen impurity concentration, and outstanding oxidation resistance. The wet etch rate of HCP SiN_x films is significantly improved compared with that of ICP SiN_x films. In addition, the HCP SiN_x films exhibit superb electrical properties, such as the dielectric constant, gate leakage current, and dielectric breakdown field.