Low temperature growth (001) facet-oriented p-type FAPbI3 perovskite solar cells

Abstract

Various atomic arrangements and coordination of facets significantly influence the photoelectric properties of perovskites. When preparing FAPbI3 with a (001) crystal facet, the presence of other crystal facets such as (011) or (111) can adversely affect the carrier extraction efficiency and device stability. In this study, the desired (001) orientations of FAPbI3 are greatly promoted without the presence of other crystal planes attributed to the formation of 2D PEA2FAn−1PbnI3n+1. This enhancement in the crystallographic orientation of FAPbI3 concurrently enabled a transition in its conductivity type from n-type to p-type. Furthermore, our DFT results revealed that the holes in the (001) facet exhibit superior carrier transport properties in FA-based perovskites. As a result, the devices show a power conversion efficiency of 23.02% with a Voc of 1.19 V.

Graphical abstract: Low temperature growth (001) facet-oriented p-type FAPbI3 perovskite solar cells

Supplementary files

Article information

Article type
Communication
Submitted
19 Apr 2025
Accepted
23 Jun 2025
First published
24 Jun 2025

Chem. Commun., 2025, Advance Article

Low temperature growth (001) facet-oriented p-type FAPbI3 perovskite solar cells

J. Chen, C. Gao, J. Tao, X. Yin, Z. Li, Y. Ren, C. He and X. An, Chem. Commun., 2025, Advance Article , DOI: 10.1039/D5CC02184G

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