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Issue 5, 2015
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AACVD of Cu2−xS, In2S3 and CuInS2 thin films from [Cu(iBu2PS2)(PPh3)2] and [In(iBu2PS2)3] as single source precursors

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Abstract

[In(iBu2PS2)3] and [Cu(iBu2PS2)(PPh3)2] complexes have been synthesized and used as single source precursors to deposit thin films of cubic In2S3 and Cu2−xS respectively on glass substrates by aerosol-assisted chemical vapor deposition (AACVD) at 350–500 °C. Thin films of CuInS2 have also been deposited by using 1 : 1 molar ratio of [In(iBu2PS2)3] and [Cu(iBu2PS2)(PPh3)2]. The deposited thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray diffraction (EDX) techniques. Deposition of films at different temperatures showed significant variation in stoichiometry and microstructure. The CuInS2 thin films were ultrasonicated in toluene along with dodecanthiol for 3 hours to obtain a suspension of CuInS2 nanocrystallites with a diameter of ca. 18 ± 2 nm and a band gap of 1.59 eV.

Graphical abstract: AACVD of Cu2−xS, In2S3 and CuInS2 thin films from [Cu(iBu2PS2)(PPh3)2] and [In(iBu2PS2)3] as single source precursors

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Publication details

The article was received on 11 Dec 2014, accepted on 10 Mar 2015 and first published on 12 Mar 2015


Article type: Paper
DOI: 10.1039/C4NJ02289K
Citation: New J. Chem., 2015,39, 4047-4054
  • Open access: Creative Commons BY license
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    AACVD of Cu2−xS, In2S3 and CuInS2 thin films from [Cu(iBu2PS2)(PPh3)2] and [In(iBu2PS2)3] as single source precursors

    S. N. Malik, A. Q. Malik, R. F. Mehmood, G. Murtaza, Y. G. Alghamdi and M. A. Malik, New J. Chem., 2015, 39, 4047
    DOI: 10.1039/C4NJ02289K

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