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Issue 37, 2014
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Structural transformation of lattice defects in free-spreading growth of bulk SiC crystals

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Abstract

Using synchrotron X-ray topography and phase-contrast imaging, we investigated lattice defects in bulk SiC crystals grown by physical vapor transport in a free spreading condition. We find that polytype inclusions appearing at initial growth stage are overgrown by the matrix, making pores which are then transformed into micropipes with a low density of 10 cm−2, in particular, in the lateral region. We propose that complex planar defects configured from dislocations and micropipes are transformed into slit pores via vacancy-diffusion and micropipes-attraction mechanisms. Our finding suggests that suppression of the nucleation of foreign polytype inclusions is a key approach for providing high quality free spreading SiC growth.

Graphical abstract: Structural transformation of lattice defects in free-spreading growth of bulk SiC crystals

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Publication details

The article was received on 21 Jul 2014, accepted on 28 Jul 2014 and first published on 15 Aug 2014


Article type: Paper
DOI: 10.1039/C4CE01515K
Citation: CrystEngComm, 2014,16, 8917-8923
  • Open access: Creative Commons BY license
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    Structural transformation of lattice defects in free-spreading growth of bulk SiC crystals

    T. S. Argunova, M. Yu. Gutkin, J. H. Je, J. H. Lim, E. N. Mokhov and A. D. Roenkov, CrystEngComm, 2014, 16, 8917
    DOI: 10.1039/C4CE01515K

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