Unfolding the potential of the AgSbSe2 chalcogenide for advancements in solar cell and photodetector technologies

Abstract

The significance of employing a singular, multifunctional material in solar cells and photodetectors has increased due to its substantial impact on device performance. This study presents the design guidelines and an inclusive simulation of high-performance chalcogenide AgSbSe₂-based solar cells and photodetectors using SCAPS-1D for the first time. Through a comprehensive analysis, the potential of multifunctional optoelectronic applications is highlighted by combining an n-CdS window layer with three back surface field (BSF) materials: Al_xGa_1−xSb, FeS₂, and Cu₂SnS₃ (CTS). Among all the examined structures, the n-CdS/p-AgSbSe₂/p⁺-Al_xGa_1−xSb configuration exhibits the highest open circuit voltage (V_OC) of 0.85 V and an idealized power conversion efficiency (PCE) of 34.32%, along with a fill factor (FF) of 86.64% and a short circuit current density (J_SC) of 46.35 mA cm⁻². Nevertheless, the n-CdS/p-AgSbSe₂/p⁺-FeS₂ and n-CdS/p-AgSbSe₂/p⁺-CTS structures exhibit PCEs of 30.37% and 30.30%, respectively, with the corresponding V_OC values of 0.74 V and 0.76 V, underscoring their distinct photovoltaic characteristics. Furthermore, with proper optimization, the AgSbSe₂-based photodetector demonstrates a remarkable responsivity of 0.81 A W⁻¹ and an excellent detectivity of 2.93 × 10¹⁵ Jones at a wavelength of 1100 nm. Due to the superior band alignment of n-CdS/p-AgSbSe₂/p⁺-Al_xGa_1−xSb, a higher built-in potential of approximately 2.37 V is achieved by capacitance–voltage (C–V) analysis, which effectively enhances the maximum V_OC and overall efficiency of the device.