Correction: Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO2 films for dynamic random-access memory capacitors

Tae Kyun Kim; Haengha Seo; Junil Lim; Heewon Paik; Jonghoon Shin; Haewon Song; Dae Seon Kwon; Cheol Seong Hwang

doi:10.1039/D6TC90030E

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Correction: Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO₂ films for dynamic random-access memory capacitors

Tae Kyun Kim,^a Haengha Seo,^a Junil Lim,^a Heewon Paik,^a Jonghoon Shin,^a Haewon Song,^a Dae Seon Kwon*^b and Cheol Seong Hwang*^a

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* Corresponding authors

^a Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, Republic of Korea
E-mail: cheolsh@snu.ac.kr

^b Department of Chemical and Biological Engineering, Sookmyung Women's University, Seoul, Republic of Korea
E-mail: dskwon@sookmyung.ac.kr

Abstract

Correction for ‘Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO₂ films for dynamic random-access memory capacitors’ by Tae Kyun Kim et al., J. Mater. Chem. C, 2025, 13, 16969–16980, https://doi.org/10.1039/D5TC01401H.

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DOI: https://doi.org/10.1039/D6TC90030E
Article type: Correction
Submitted: 23 Feb 2026
Accepted: 23 Feb 2026
First published: 03 Mar 2026
This article is Open Access

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J. Mater. Chem. C, 2026, Advance Article

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Correction: Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO₂ films for dynamic random-access memory capacitors

T. K. Kim, H. Seo, J. Lim, H. Paik, J. Shin, H. Song, D. S. Kwon and C. S. Hwang, J. Mater. Chem. C, 2026, Advance Article , DOI: 10.1039/D6TC90030E

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Journal of Materials Chemistry C

Correction: Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO₂ films for dynamic random-access memory capacitors

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Correction: Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO₂ films for dynamic random-access memory capacitors

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