Atmospheric pressure chemical vapor deposition growth of large-area monolayer ReS2 films for high-performance photodetectors

Abstract

Current research on rhenium disulfide (ReS₂) primarily focuses on small-scale thin sheets, but large-scale two-dimensional (2D) monolayer growth is challenging, with poor photodetector performance. Therefore, an in-depth investigation into the growth process of large-scale ReS₂, along with exploring approaches to enhance its optoelectronic performance, will overcome limitations and support scalable production for industrial applications. In this study, we optimized the atmospheric-pressure chemical vapor deposition (APCVD) process to achieve centimeter-scale continuous monolayer ReS₂ films. Furthermore, annealing treatment significantly enhances the optoelectronic performance of ReS₂, with the annealed ReS₂ film-based photodetector exhibiting a responsivity (R_λ) of 0.37 A W⁻¹ and an external quantum efficiency (EQE) of 101.94% under 450 nm illumination, while achieving rapid response and decay times of 2.1 s and 2.0 s, respectively. Remarkably, the ReS₂ (annealed)/GaSe van der Waals heterojunction photodetector demonstrates unprecedented performance, exhibiting an ultrahigh R_λ of 48.22 A W⁻¹, an exceptional EQE of 1.33 × 10⁴%, along with a high detectivity of 1.20 × 10¹² Jones and an impressive on–off ratio of 4.74 × 10³. Meanwhile, it maintains a fast response speed. These findings not only provide new insights into the synthesis of ReS₂ but also highlight its great potential for next-generation high-performance optoelectronic devices.