Optoelectronic control of ferroelectric field coupling for enhanced ultraviolet photodetection

Abstract

Wide and ultrawide bandgap semiconductors, including but not limited ZnO, GaN, SnO2 and Ga2O3, have emerged as a class of ultraviolet (UV) photosensitive semiconductors, displaying huge potentials for Internet of Things, optical communications and imaging, etc. Yet, to achieve a high-performance UV PD without complicated designs at low supply voltage and weak light intensity remain challenging. Which would help developing integrated devices with more functionalities rather than basic photodetection ability are highly required and have been triggered ever-growing interest in scientific and industrial communities. Ferroelectric thin films have become a potential candidate in enhancing UV detection due to their excellent dielectric, piezoelectric, pyroelectric, acousto-optic effects, etc., which can satisfy the demand for the diversified development of UV detectors by right of multi-field coupling. In this review, the field coupling effects in improving UV photodetection by ferroelectric materials will be discussed in detail. And, the advantages and challenges of ferroelectric field coupling enhanced UV PD are summarized, and the possible development direction in the future, such as neuromorphic visual sensor and in-sensor computing, is proposed.