Improving-Performance Photodetectors Based on MAPbBr 3 Film Optimization and MeOP-DSF Hole-Transport Layer

Abstract

Perovskite photodetectors (PDs) have garnered substantial research interest owing to their broad spectral response capability and solution-processable attributes. However, the widespread use of Spiro-OMeTAD as hole transport layer (HTL) faces the issue of energy level mismatch with perovskite, restricting the performance optimization of PDs. Herein, a novel organic HTL (MeOP-DSF) with a planar conjugated structure and molecular surface adaptability was introduced in perovskite PDs, exhibiting excellent bandgap alignment with perovskites. Combined with an optimized MAPbBr 3 film, the performance of PDs is significantly enhanced by improving carrier transport efficiency and interfacial charge separation effectiveness. Through the optimization of anti-solvent engineering and annealing process parameters, smooth and dense MAPbBr 3 films were prepared. Subsequently, the introduction of MeOP-DSF with optimized band alignment promoted interfacial charge extraction and suppressed defect-mediated recombination. The MeOP-DSF-based PDs exhibit a responsivity of 0.25 A/W, an EQE of 83.3%, a detectivity of 2.1×10¹² Jones (467.6% increase), a low dark current of 1.3×10 -11 A, and a fast response rise time of 39 μs, outperforming the Spiro-OMeTAD-based devices. This provides a technical paradigm for the design and performance breakthrough of high-efficiency perovskite optoelectronic devices, and validates the potential of organic HTL materials, thus presenting a universal strategy for highperformance PDs.