Mixed-dimensional gallium oxide/two-dimensional material heterostructures for advanced electronics and optoelectronics

Abstract

In the current era of big data, it is crucial to develop advanced optoelectronic devices that integrate sensing, storage, computing, and other functions to meet the diverse needs of information processing systems for high energy efficiency, high performance, and emerging functions of electronic devices. Gallium oxide (Ga₂O₃) stands out in fields such as photodetectors, field effect transistors, and gas sensors due to its advantages of ultra-wide bandgap (4.8–5.4 eV), high breakdown field strength (8 MV cm⁻¹) and high dielectric constant, becoming the preferred material for the next generation of high-power devices. To overcome the size limitation of transistor performance in the Moore era, two-dimensional (2D) materials have received widespread attention in the field of electronic devices due to their advantages such as atomic thickness, no dangling bonds, and large specific surface area. Here, we provide a comprehensive review of the growth, integration and application of Ga₂O₃/2D heterojunctions in optoelectronic devices. This review summarizes their innovative applications in logic functional transistors, ultraviolet detectors, memory storage, optoelectronic synapse devices and flexible electronic devices, aiming to promote the practical application of Ga₂O₃-based devices and provide new ideas for the development of multifunctional integrated devices.