Defect structure–performance correlation in Eu3+@UiO-66: design of coordination sites for rapid optical O2 sensing
Abstract
Defect engineering offers an effective route to tailor the local coordination environment, gas transport and excited-state processes in metal–organic frameworks (MOFs). We establish a quantitative structure–property relationship linking defect-modulated porosity in UiO-66-based MOFs to the Stern–Volmer parameter for O2 sensitivity. By systematically introducing three distinct defect types, we reveal that vacancy formation increases the accessibility of Eu3+ sites and accelerates O2 diffusion, thereby enhancing dynamic quenching, while simultaneously introducing a non-negligible static contribution. An optimal defect concentration (represented by SBET) is identified for highest O2 gas response, arising from a balance between O2 accesibility and the availability of active quenching sites. Phase-correlated luminescence decay measurements show a clear reduction of Eu3+ lifetime upon switching from N2 to ambient air, confirming the contribution of the collisional quenching pathway. The resulting nonlinear Stern–Volmer behaviour is rationalized by an apparent quenching constant Kapp,SV, incorporating both the intrinsic quenching rate, the native lifetime, and a structural factor H that reflects defect-dependent porosity. A volcano-type dependence of sensing efficiency on defect concentration further highlights the competing roles of Eu3+ exposure and diffusion resistance. This study provides a mechanistic framework for defect-regulated triplet quenching in porous solids and offers a general design principle for lanthanide-based porous optical oxygen sensors. The general design principle established in this study is that defect-engineered, O2-accessible coordination environments can be used to balance mass transport and triplet-state energy transfer, thereby maximizing lanthanide-based O2 sensing performance.
- This article is part of the themed collection: Journal of Materials Chemistry C HOT Papers

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