Charge carrier dynamics modulation of AgxInS2 thin films for high-performance photodetection

Abstract

Chalcogenide semiconductors have attracted significant attention in the field of photodetection due to their excellent optoelectronic properties. Among them, solution-processed AgInS₂ materials show promising application potential, but the understanding of their optoelectronic behaviors at the microscopic scale remains insufficient. In this study, by adjusting the Ag content in the AgInS₂ precursor solution to optimize the film-forming process, combined with transient absorption spectroscopy, it was found that Ag_0.8InS₂ exhibits more excellent carrier dynamics. Furthermore, we revealed the interaction mechanism between Ag_0.8InS₂ and different transport layers, clarifying the design principles of device structures more conducive to photodetection. By introducing semi-transparent electrodes, we investigated the carrier dynamics in the complete device and finally fabricated photodetectors with great application potential in the field of ultraviolet communication. This work provides a microscopic theoretical basis for the optimization of the design of AgInS₂-based photodetectors and is of great significance for promoting their practical applications.