From the journal:

Journal of Materials Chemistry C

Flexible RRAM utilizing CdSe quantum dot–P4VP composites and graphene layers

Boram Kim,†ce   Jaeyoon Moon,†b   Seonjung Lee, ORCID logo de   Sookyeong Kim,ae   Hyungjun Choi,ae   Dong-Wook Park,ae   Dahin Kim*b  and  Yoon Kim ORCID logo *ae  

* Corresponding authors

a Department of Electrical and Computer Engineering, University of Seoul, Seoul, South Korea
E-mail: yoonkim82@uos.ac.kr

b Department of Chemical Engineering, Center for Innovative Chemical Processes, Institute of Engineering, University of Seoul, Seoul, South Korea
E-mail: dhkim23@uos.ac.kr

c Institute of Information and Technology, University of Seoul, Seoul, South Korea

d Department of Intelligent Semiconductor, University of Seoul, Seoul, South Korea

e Center for Semiconductor Research, University of Seoul, Seoul 02504, South Korea

Abstract

We developed a flexible RRAM device for neuromorphic systems using a CdSe quantum dot–P4VP (poly-4-vinylpyridine) composite with a graphene interfacial layer for superior reliability and flexibility. Exhibiting linear synaptic updates, the device achieved an 87.41% MNIST pattern recognition accuracy, showing great potential as a synaptic device for wearable AI systems.

Graphical abstract: Flexible RRAM utilizing CdSe quantum dot–P4VP composites and graphene layers

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Article information

DOI
https://doi.org/10.1039/D5TC03937A
Article type
Paper
Submitted
05 Nov 2025
Accepted
29 Mar 2026
First published
07 Apr 2026
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. C, 2026, Advance Article

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Flexible RRAM utilizing CdSe quantum dot–P4VP composites and graphene layers

B. Kim, J. Moon, S. Lee, S. Kim, H. Choi, D. Park, D. Kim and Y. Kim, J. Mater. Chem. C, 2026, Advance Article , DOI: 10.1039/D5TC03937A

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