Melt processed perovskite glass-ceramic films for large-area X-ray detection and imaging

Abstract

Metal halide perovskite is promising semiconducting materials for sensitive X-ray detection and imaging. However, incompatibility with thin-film transistor (TFT) backplanes has posed a major challenge to the commercial deployment of perovskite devices. Here, we report perovskite glass-ceramic films comprising of (4-EAMP)₂Pb₃Br₁₀ glass (4-EAMP = 4-(ethylaminomethyl)pyridine) and CsPbBr₃ crystal that can be fabricated via a melt-pressing procedure. We found that the glassy phase fills the crystal grain boundaries, which reduces interface defects and suppresses ion migration along the boundaries. These improvements thus enable the composite film to achieve a remarkable mobility-lifetime (μτ) product of 1.14 × 10^{⁻ 4} cm ² V^{⁻ 1} , a high sensitivity of 9.8 × 10 ⁴ μC Gy_air^{⁻ 1} cm^{⁻ 2} , and a low detection limit of 197 nGy_air s^{⁻ 1} . Compared to pressed perovskite wafers, the adhesive and meltable nature of the glass phase enables seamless integration of the detector with substrates, leading to high-performance X-ray imaging via TFT backplane integration. The demonstrated perovskite glass-ceramic system represents a new kind of semiconductive composite with both excellent processability and optoelectronic properties for integrated optoelectronics.